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       Small Signal Switching Diodes Reverse V oltage: 75 Volts Forward Current: 150 mA RoHS Device Page 1 REV:D Features -Design for mounting on small surface. -High speed switching. -High mounting capability , strong surge withstand, high reliability. Mechanical data -Case: SOT -23, molded plastic. -T erminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.0078 grams Circuit diagram CDST-4148-G Maximum Ratings and Electrical Characteristics, Single Diode (at Ta=25°C unless otherwise noted) QW-B0001 Comchip Technology CO., LTD. Peak Repetitive peak reverse voltage Units Symbol Parameter VRRM IO 1 2 3 Conditions T=1.0 μS V mA Dimensions in inches and (millimeter) SOT-23 3 1 2 0.118(3.00) 0.110(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.012(0.30) VDC Peak forward surge current A IFSM DC Blocking voltage 75 Average forward current 150 2.0 Forward voltage VF @IF=1mA @IF=10mA @IF=50mA @IF=150mA 0.715 0.855 1.0 1.25 V Reverse current IR 2.5 nA @VR=20V @VR=75V Reverse recovery time Capacitance between terminals Junction temperature Storage temperature Trr CT TJ TSTG VR=0V, f=1.0MHz 4 2 +150 nS pF °C °C PD mW Power dissipation 350 Reverse breakdown voltage V(BR)R 75 V IR=100μA V 25 +150 0.020(0.50) IF=IR=10mA, 1rr=0.1*IR RL=100Ω RMS reverse voltage VRMS V 53 75 T=1.0 S 1.0 mA IFM Forward continous current 300 Min. Typ. Max. -65 RθJA °C/W Thermal resistance junction to ambient 357 μA |